BGA7L1N6E6327XTSA1 vs BGA7L1N6E6327XT Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BGA7L1N6E6327XTSA1 disebabkan oleh Infineon dan BGA7L1N6E6327XT disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BGA7L1N6E6327XTSA1 | BGA7L1N6E6327XT |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BGA7L1N6E6327XTSA1 | — |
| Fungsi | RF Low Noise Amplifier (LNA) MMIC | — |
| Technology | Silicon Germanium (SiGe) | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB (typical) | 13.3 dB |
| Noise Figure | 0.90 dB (typical) | — |
| Tegangan Pemberi Arus | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Arus Pemberi Arus | 4.4 mA (typical) | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic-high enable | Digital on/off switch, 1 V logic level |
| Input/Output Impedance | Internally matched to 50 ohm | — |
| Kemasan | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm | TSNP-6-2 (leadless) |
| Suhu Operasi | -40 C to +85 C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standard Pack Quantity | 15,000 (reel) | — |
| Status RoHS | Compliant | Compliant |
| Target Application | LTE low-band (700/800/900 MHz) receiver front-end | — |
| Type | — | Low Noise Amplifier (LNA) MMIC |
| Noise Figure (NF) | — | 0.90 dB |
| Package Footprint | — | 0.7 mm x 1.1 mm |
| Gambaran Suhu Operasi | — | -40C to +85C |
| Tetstruktur | — | Single-stage with on-chip matching and bypass |
| Application Band | — | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) |