BGA7L1N6E6327XTSA1 vs BGA7L1N6E6327XT Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BGA7L1N6E6327XTSA1 sa pamamagitan ng Infineon at BGA7L1N6E6327XT sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BGA7L1N6E6327XTSA1 - 728-960MHz LTE LNA, 0.9dB NF | Infineon
BGA7L1N6E6327XTSA1 ✓ NakahandaInfineon
BGA7L1N6E6327XT - LTE Low Noise Amplifier 728-960MHz | Infineon
BGA7L1N6E6327XT ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BGA7L1N6E6327XTSA1 | BGA7L1N6E6327XT |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BGA7L1N6E6327XTSA1 | — |
| Fungsi | RF Low Noise Amplifier (LNA) MMIC | — |
| Technology | Silicon Germanium (SiGe) | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB (typical) | 13.3 dB |
| Noise Figure | 0.90 dB (typical) | — |
| Volte ng Pagbibigay | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Kuru-kuryente ng Pagbibigay | 4.4 mA (typical) | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic-high enable | Digital on/off switch, 1 V logic level |
| Input/Output Impedance | Internally matched to 50 ohm | — |
| Packhaging | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm | TSNP-6-2 (leadless) |
| Temperature na Operasyon | -40 C to +85 C | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standard Pack Quantity | 15,000 (reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Target Application | LTE low-band (700/800/900 MHz) receiver front-end | — |
| Type | — | Low Noise Amplifier (LNA) MMIC |
| Noise Figure (NF) | — | 0.90 dB |
| Package Footprint | — | 0.7 mm x 1.1 mm |
| Hanay ng Temperature na Operasyon | — | -40C to +85C |
| Topolohiya | — | Single-stage with on-chip matching and bypass |
| Application Band | — | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) |