H5CG48AGBDX018N vs K4RAH086VB-BIQK Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5CG48AGBDX018N disebabkan oleh SK hynix dan K4RAH086VB-BIQK disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5CG48AGBDX018N H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N ✓ Aktif
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ Aktif

Pengandingan Spesifikasi

Parametr H5CG48AGBDX018N K4RAH086VB-BIQK
Merek SK hynix Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $87.42 —
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Density 16 Gb (2G x 8) 16 Gb
Organisasi 2G x 8 2G x 8
Kadar Data 5600 Mbps 4800 Mbps/pin
Tegangan Pemberi Arus 1.1 V —
Bus Width 8 bit —
Kemasan 82-ball FCBGA (JEDEC DDR5 78/82-ball) 82FBGA
Jenis Pemasangan Surface Mount —
Suhu Operasi -40C to +85C [DATA_NEEDED: operating temperature range]
Antaramuka JEDEC DDR5 DDR5 (CA reduced pin count)
Memory Generation DDR5 (SK hynix A-die) —
Clock Frequency up to 5600 MHz (data rate 5600 Mbps) —
Application Class Computing, industrial controllers, embedded logging —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
Aras MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
Latensi CAS — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga