H5CG48AGBDX018N vs K4RAH086VB-BIQK 比較

詳細並排比較 H5CG48AGBDX018N 由 SK hynix 與 K4RAH086VB-BIQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5CG48AGBDX018N H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N ✓ 啟用中
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 啟用中

規格比較

參數 H5CG48AGBDX018N K4RAH086VB-BIQK
品牌 SK hynix Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
單價 (USD) $87.42 —
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb (2G x 8) 16 Gb
組織 2G x 8 2G x 8
資料速率 5600 Mbps 4800 Mbps/pin
供應電壓 1.1 V —
Bus Width 8 bit —
封裝 82-ball FCBGA (JEDEC DDR5 78/82-ball) 82FBGA
安裝類型 Surface Mount —
工作溫度 -40C to +85C [DATA_NEEDED: operating temperature range]
介面 JEDEC DDR5 DDR5 (CA reduced pin count)
Memory Generation DDR5 (SK hynix A-die) —
Clock Frequency up to 5600 MHz (data rate 5600 Mbps) —
Application Class Computing, industrial controllers, embedded logging —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
CAS 延遲 — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]

資料表與資源

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