K4A4G085WD-BCRC vs K4A4G085WD-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WD-BCRC disebabkan oleh Samsung Electronics dan K4A4G085WD-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | K4A4G085WD-BCRC | K4A4G085WD-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Jenis Ingatan | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Kadar Data | 2400 Mb/s (PC2400) | 2666 Mbps/pin |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | FBGA-78 (TFBGA) | 78-ball FBGA |
| Number of Terminals | 78 | — |
| Antaramuka | Parallel | DDR4 (JEDEC-compatible) |
| Access Mode | Multi-bank page burst | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Suhu Operasi | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |