K4A4G085WD-BCRC vs K4A4G085WE-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WD-BCRC disebabkan oleh Samsung Electronics dan K4A4G085WE-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WD-BCRC | K4A4G085WE-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Jenis Ingatan | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Kadar Data | 2400 Mb/s (PC2400) | 2400 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-78 (TFBGA) | FBGA-78 |
| Number of Terminals | 78 | — |
| Antaramuka | Parallel | Parallel |
| Access Mode | Multi-bank page burst | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | 8n / 1X refresh (per JEDEC DDR4) |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant (per LCSC listing) |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Suhu Operasi | — | [DATA_NEEDED: Operating Temperature Range] |