K4A4G085WD-BCRC vs K4A4G085WE-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCRC | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Memory Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Uri ng Memory | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Rate ng Data | 2400 Mb/s (PC2400) | 2400 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-78 (TFBGA) | FBGA-78 |
| Number of Terminals | 78 | — |
| Interface | Parallel | Parallel |
| Access Mode | Multi-bank page burst | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | 8n / 1X refresh (per JEDEC DDR4) |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | Compliant (per LCSC listing) |
| Level ng MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Temperature na Operasyon | — | [DATA_NEEDED: Operating Temperature Range] |