K4A8G085WC-BCRC vs H5AN8G8NCJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCRC disebabkan oleh Samsung Electronics dan H5AN8G8NCJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCRC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb (1 GB) |
| Organisasi | 1G x 8 | x8 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V (VDD) |
| Kadar Data | 2400 Mbps (DDR4-2400) | up to 2666 Mbps |
| Kemasan | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Status RoHS | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| Antaramuka | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |