K4A8G085WC-BCRC vs H5AN8G8NCJR-RDC 比較
詳細並排比較 K4A8G085WC-BCRC 由 Samsung Electronics 與 H5AN8G8NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WC-BCRC | H5AN8G8NCJR-RDC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb (1 GB) |
| 組織 | 1G x 8 | x8 |
| 供應電壓 | 1.2 V | 1.2 V (VDD) |
| 資料速率 | 2400 Mbps (DDR4-2400) | up to 2666 Mbps |
| 封裝 | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| 介面 | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |