K4AAG085WM-BCTD vs K4AAG085WM-BCRC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCTD disebabkan oleh Samsung Electronics dan K4AAG085WM-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4AAG085WM-BCTD K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung

K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung

K4AAG085WM-BCTD ✓ Aktif
Samsung Electronics
K4AAG085WM-BCRC K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC ✓ Aktif

Pengandingan Spesifikasi

Parametr K4AAG085WM-BCTD K4AAG085WM-BCRC
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $9.95 —
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Saiz Ingatan 16 Gb —
Organisasi 2G x 8 x8
Speed Grade DDR4-2666 —
Tegangan Pemberi Arus 1.2 V —
Kemasan FBGA-78 78-ball FBGA
Suhu Operasi 0C to +85C [DATA_NEEDED: operating temperature range]
Jenis Antaramuka Parallel (DDR4) —
Jenis Pemasangan Surface Mount Surface Mount
Clock Rate 1333 MHz —
Kadar Data 2666 MT/s —
Bank Group Architecture DDR4 bank groups —
Density Class 16 Gbit monolithic DRAM —
Application Class Industrial / embedded memory —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Aras MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Density — [DATA_NEEDED: exact density in Gb]
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Max Data Rate — Up to 3200 Mbps/pin (family max per Samsung DDR4 page)
Antaramuka — SSTL12
Architecture — Bank-group DDR4
Termination — On-Die Termination (ODT)
Latensi CAS — [DATA_NEEDED: CL of -BCRC speed grade]
Clock — Differential clock CK/CK#

Laporan Datasheet & Sumber

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