K4B4G1646D-BYH9 vs NT5CC256M16DN-FLNA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYH9 disebabkan oleh Samsung Electronics dan NT5CC256M16DN-FLNA disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BYH9 | NT5CC256M16DN-FLNA |
|---|---|---|
| Merek | Samsung Electronics | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1333 Mbps | 1600 Mbps (PC3-12800) |
| Tegangan Pemberi Arus | 1.35 V | — |
| Suhu Operasi | 0 ~ 85 °C | — |
| Kemasan | 96FBGA | 96-ball FBGA |
| Number of Banks | 8 | — |
| Latensi CAS | Programmable | 11 |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Jenis Ingatan | — | DDR3L SDRAM |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (1.283V-1.45V) |
| Backward Compatible Voltage | — | 1.5V ±0.075V |
| Burst Length | — | 8 |
| Gambaran Suhu Operasi | — | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) |
| Antaramuka | — | 16-bit I/O |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS | — | Compliant |