K4B4G1646D-BYH9 vs NT5CC256M16DN-FLNA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BYH9 sa pamamagitan ng Samsung Electronics at NT5CC256M16DN-FLNA sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ NakahandaNanya Technology
NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DN-FLNA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BYH9 | NT5CC256M16DN-FLNA |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Density | 4 Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 1333 Mbps | 1600 Mbps (PC3-12800) |
| Volte ng Pagbibigay | 1.35 V | — |
| Temperature na Operasyon | 0 ~ 85 °C | — |
| Packhaging | 96FBGA | 96-ball FBGA |
| Number of Banks | 8 | — |
| Latensya ng CAS | Programmable | 11 |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Uri ng Memory | — | DDR3L SDRAM |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (1.283V-1.45V) |
| Backward Compatible Voltage | — | 1.5V ±0.075V |
| Burst Length | — | 8 |
| Hanay ng Temperature na Operasyon | — | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) |
| Interface | — | 16-bit I/O |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS | — | Compliant |