K4B4G1646D-BYMA0 vs K4B4G1646E-BYMATCV Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYMA0 disebabkan oleh Samsung Electronics dan K4B4G1646E-BYMATCV disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ AktifSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BYMA0 | K4B4G1646E-BYMATCV |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | — |
| Total Memory Size | 4 Gb | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kadar Data | 1866 Mbps (PC3-14900) | 1866 Mbps |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Gambaran Suhu Operasi | 0°C to +85°C | -40°C to +95°C |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | — |
| ZQ Calibration | Supported | — |
| Data Mask | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| Saiz Ingatan | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilangan Pin | — | 96 |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (with burst chop 4) |
| Latensi CAS | — | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | — | Yes |
| Self-Refresh | — | Yes |
| Status RoHS | — | Compliant |