K4B4G1646D-BYMA0 vs K4B4G1646E-BYMATCV Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BYMA0 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BYMATCV sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ NakahandaSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BYMA0 | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Organisasyon | 256M x 16 | — |
| Total Memory Size | 4 Gb | — |
| Volte ng Pagbibigay | 1.35 V | 1.35 V |
| Rate ng Data | 1866 Mbps (PC3-14900) | 1866 Mbps |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Hanay ng Temperature na Operasyon | 0°C to +85°C | -40°C to +95°C |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | — |
| ZQ Calibration | Supported | — |
| Data Mask | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| Laki ng Memory | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilang ng Pins | — | 96 |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (with burst chop 4) |
| Latensya ng CAS | — | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | — | Yes |
| Self-Refresh | — | Yes |
| Tindminan RoHS | — | Compliant |