K4B4G1646E-BYMA vs H5TC4G63AFR-PBI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMA disebabkan oleh Samsung Electronics dan H5TC4G63AFR-PBI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMA | H5TC4G63AFR-PBI |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Harga Unit (USD) | $14.32 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.28 V to 1.575 V) | 1.35 V |
| Clock Frequency | 933 MHz | — |
| Kadar Data | 1866 Mbps/pin | DDR3-1600 (PC3L-12800) |
| Suhu Operasi | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Kemasan | FBGA-96 | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | Programmable |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 (BL8) |
| Bilangan Pin | 96 | — |
| Total Memory Size | — | 4 Gb |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Refresh Period | — | 7.8 us at 85°C |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Number of Terminals | — | 96 |
| Status RoHS | — | Compliant |