K4B4G1646Q vs K4B4G1646 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646Q disebabkan oleh Samsung Electronics dan K4B4G1646 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646Q | K4B4G1646 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Lebar Bus Data | 16 bits | — |
| Tegangan Pemberi Arus | 1.35V | 1.5 V (DDR3L variants 1.35 V) |
| Kadar Data | 1866 Mbps (PC3-14900) | — |
| Kemasan | 96-ball FBGA | 96-FBGA |
| Die | Q-die | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| Latensi CAS | Programmable | — |
| Suhu Operasi | [DATA_NEEDED: Operating temperature range] | 0C to +95C |
| Saiz Ingatan | — | 4 Gbit |
| Antaramuka | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| Jenis Pemasangan | — | Surface Mount |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |