K4B4G1646Q vs MT41K256M16TW-093 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646Q disebabkan oleh Samsung Electronics dan MT41K256M16TW-093 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646Q | MT41K256M16TW-093 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $15.50 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | — |
| Lebar Bus Data | 16 bits | 16 bit |
| Tegangan Pemberi Arus | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| Kadar Data | 1866 Mbps (PC3-14900) | 2133 MT/s |
| Kemasan | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Die | Q-die | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| Latensi CAS | Programmable | — |
| Suhu Operasi | [DATA_NEEDED: Operating temperature range] | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 1.066 GHz |
| Access Time | — | 20 ns |
| Jenis Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Gambaran Suhu Operasi | — | 0°C to +95°C (TC) |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |