K4B4G1646Q vs MT41K256M16TW-093 Comparison
Detailed side-by-side comparison of K4B4G1646Q by Samsung Electronics and MT41K256M16TW-093 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646Q
K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646Q β ActiveMicron Technology
MT41K256M16TW-093
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 β ActiveSpecification Comparison
| Parameter | K4B4G1646Q | MT41K256M16TW-093 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $15.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | β |
| Organization | 256M x 16 | β |
| Data Bus Width | 16 bits | 16 bit |
| Supply Voltage | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| Data Rate | 1866 Mbps (PC3-14900) | 2133 MT/s |
| Package | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Die | Q-die | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Burst Length | 8 (BL8) | β |
| On-Die Termination | Yes (ODT) | β |
| CAS Latency | Programmable | β |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Clock Frequency | β | 1.066 GHz |
| Access Time | β | 20 ns |
| Interface Type | β | Parallel |
| Mounting Type | β | Surface Mount |
| Operating Temperature Range | β | 0Β°C to +95Β°C (TC) |
| RoHS Status | β | Compliant |
| REACH Status | β | Compliant |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |