K4B4G1646Q vs MT41K256M16TW-093 Comparison
Detailed side-by-side comparison of K4B4G1646Q by Samsung Electronics and MT41K256M16TW-093 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646Q | MT41K256M16TW-093 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $15.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organization | 256M x 16 | — |
| Data Bus Width | 16 bits | 16 bit |
| Supply Voltage | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| Data Rate | 1866 Mbps (PC3-14900) | 2133 MT/s |
| Package | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Die | Q-die | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| CAS Latency | Programmable | — |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 1.066 GHz |
| Access Time | — | 20 ns |
| Interface Type | — | Parallel |
| Mounting Type | — | Surface Mount |
| Operating Temperature Range | — | 0°C to +95°C (TC) |
| RoHS Status | — | Compliant |
| REACH Status | — | Compliant |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |