K4B4G1646Q vs MT41K256M16TW-093 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646Q sa pamamagitan ng Samsung Electronics at MT41K256M16TW-093 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646Q | MT41K256M16TW-093 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $15.50 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | — |
| Width ng Data Bus | 16 bits | 16 bit |
| Volte ng Pagbibigay | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| Rate ng Data | 1866 Mbps (PC3-14900) | 2133 MT/s |
| Packhaging | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Die | Q-die | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| Latensya ng CAS | Programmable | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating temperature range] | — |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 1.066 GHz |
| Access Time | — | 20 ns |
| Uri ng Interface | — | Parallel |
| Uri ng Pagpapasok | — | Surface Mount |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (TC) |
| Tindminan RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |