K4RAH086VB-BIQK vs H5CG48MEBDX014N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VB-BIQK disebabkan oleh Samsung Electronics dan H5CG48MEBDX014N disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4RAH086VB-BIQK | H5CG48MEBDX014N |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 4800 Mbps/pin | 4800 Mbps |
| Core Supply Voltage | 1.1 V (nominal) | — |
| Kemasan | 82FBGA | FBGA-82 (11 x 10 mm) |
| Configuration | X8 | — |
| Speed Grade | BIQK (-BIQK bin) | — |
| ECC | On-die ECC (DDR5 standard) | — |
| Antaramuka | DDR5 (CA reduced pin count) | — |
| Burst Length | 16 / 32 | — |
| Operating Mode | DLL enabled | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) | Compliant |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Latensi CAS | [DATA_NEEDED: CAS latency (CL)] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tegangan Pemberi Arus | — | 1.1 V |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Jenis Pemasangan | — | Surface Mount |
| Jenis Antaramuka | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |