K4RAH086VE-BCWM vs PDRQL8KCBF12-00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VE-BCWM disebabkan oleh Samsung Electronics dan PDRQL8KCBF12-00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4RAH086VE-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7.60 | — |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 5600 Mbps | 7200 MT/s |
| Supply Voltage (VDD) | 1.1 V | — |
| Kemasan | 82-ball FBGA | FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| Latensi CAS | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Status Lingkungan Hidup | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Tegangan Pemberi Arus | — | 1.1 V |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| Antaramuka | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |