K4RAH086VE-BCWM vs PDRQL8KCBF12-00 比較
詳細並排比較 K4RAH086VE-BCWM 由 Samsung Electronics 與 PDRQL8KCBF12-00 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 啟用中
規格比較
| 參數 | K4RAH086VE-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $7.60 | — |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| 組織 | 2G x 8 | 2G x 8 |
| 資料速率 | 5600 Mbps | 7200 MT/s |
| Supply Voltage (VDD) | 1.1 V | — |
| 封裝 | 82-ball FBGA | FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS 延遲 | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 生命週期狀態 | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| 供應電壓 | — | 1.1 V |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| 介面 | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |