K4RAH086VE-BCWM vs PDRQL8KCBF12-00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH086VE-BCWM sa pamamagitan ng Samsung Electronics at PDRQL8KCBF12-00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4RAH086VE-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $7.60 | — |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasyon | 2G x 8 | 2G x 8 |
| Rate ng Data | 5600 Mbps | 7200 MT/s |
| Supply Voltage (VDD) | 1.1 V | — |
| Packhaging | 82-ball FBGA | FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| Latensya ng CAS | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Katayuan ng Lifecycle | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Volte ng Pagbibigay | — | 1.1 V |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| Interface | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |