W634GU6RB-11TR vs H5TC4G63CFR-H9A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci W634GU6RB-11TR disebabkan oleh Winbond dan H5TC4G63CFR-H9A disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | W634GU6RB-11TR | H5TC4G63CFR-H9A |
|---|---|---|
| Merek | Winbond | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Kadar Data | 1866 MT/s | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V (1.5V compatible) | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-VFBGA (7.5x13 mm) | 96-ball TFBGA |
| Suhu Operasi | -40°C to +95°C | — |
| Latensi CAS | 13 | [DATA_NEEDED: CAS latency] |
| Organisasi | 256M x 16 | 256M x 16 |
| Jenis Pemasangan | Surface Mount | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Auto Self-Refresh | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Memory Density | — | 4Gb (4294967296 bit) |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Operating temperature range] |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Burst Length | — | 8, 4 (with burst chop) |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |