W634GU6RB-11TR vs H5TC4G63CFR-H9A Comparison

Detailed side-by-side comparison of W634GU6RB-11TR by Winbond and H5TC4G63CFR-H9A by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Winbond
W634GU6RB-11TR W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond

W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond

W634GU6RB-11TR ✓ Active
SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ Active

Specification Comparison

Parameter W634GU6RB-11TR H5TC4G63CFR-H9A
Brand Winbond SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4Gbit (256M x 16) —
Clock Frequency 933 MHz —
Data Rate 1866 MT/s [DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
Access Time 20 ns —
Supply Voltage 1.35V (1.5V compatible) —
Interface Parallel —
Package 96-VFBGA (7.5x13 mm) 96-ball TFBGA
Operating Temperature -40°C to +95°C —
CAS Latency 13 [DATA_NEEDED: CAS latency]
Organization 256M x 16 256M x 16
Mounting Type Surface Mount —
RoHS Status Compliant Compliant
Halogen Free Yes —
Auto Self-Refresh Yes —
Write Leveling Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Memory Density — 4Gb (4294967296 bit)
Supply Voltage (VDD) — 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) — 1.35V + 0.100 / - 0.067V
Number of Terminals — 96
Package Shape — RECTANGULAR
Operating Temperature Range — [DATA_NEEDED: Operating temperature range]
Lead-Free — Yes
Halogen Free — Yes
Burst Length — 8, 4 (with burst chop)
Differential Clock Inputs — Yes (CK, CK)
Differential Data Strobe — Yes (DQS, DQS)
On-Chip DLL — Yes
DM (Data Mask) — Yes

Datasheets & Resources

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