IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon
MPN: IAUZN10S7L289ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.42 | $142.00 |
| 500 | $1.2 | $600.00 |
| 1,000 | $1.05 | $1,050.00 |
| 5,000 | $0.92 | $4,600.00 |
IAUZN10S7L289ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion and switching. N-channel MOSFETs conduct when a positive gate-source voltage is applied and are the dominant technology in low-voltage, high-current power stages. The OptiMOS-7 family sits in Infineon's power MOSFET hierarchy (OptiMOS-7 > OptiMOS Power-MOSFET > power semiconductor > discrete semiconductor), engineered for automotive AEC-Q100 qualified applications with optimized figure-of-merit (FOM = RDS(on) × Qg).
Key features include a maximum RDS(on) of 28.9 mΩ at VGS=10 V, 100 V VDS rating, 27 A continuous ID (Tj), and 45 W power dissipation. The S3O8 (3x3 mm) package footprint offers an excellent power-density ratio, enabling compact DC-DC converter and motor-drive designs. The automotive-grade qualification makes this part suitable for safety-critical systems.
The OptiMOS-7 technology uses an advanced trench-gate structure that minimizes conduction losses and gate charge, improving switching performance. Compared to previous OptiMOS generations, the -7 family delivers lower RDS(on) × Qg figure-of-merit, enabling higher switching frequencies and smaller magnetics in SMPS designs. The 100 V rating also provides ample headroom for 48 V automotive bus rails and telecom hold-up applications.
Typical applications include automotive 48 V DC-DC converters, electric power steering (EPS), braking system motor drivers, LED headlamp drivers, and high-current OR-ing switches. The automotive-grade qualification extends to body electronics modules where AEC-Q100 compliance is required for OEM acceptance.
When designing with this device, ensure adequate PCB copper area for thermal dissipation. At 27 A continuous current, even with 28.9 mΩ RDS(on) (≈ 21 W conduction loss), a substantial thermal pad or copper pour is required to keep the junction temperature below the 175 °C limit. Gate drive should swing fully to 10 V for lowest RDS(on).
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/PCB design notes not found in the manufacturer datasheet.
Drop-in alternatives for IAUZN10S7L289ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUZN10S7L289ATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Drain-Source Voltage (VDS), Automotive Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN10S7L289TATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN10S7L290TATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →IAUCN10S5L110TATMA1
✅ Drop-In✓ In Stock
$2.08 / Unit
View Datasheet →IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUZ18N10S5L420ATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IAUC120N06S5L015ATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IAUZN10S7L289ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-7 |
| Technology | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A |
| Power Dissipation (Ptot, Tc=25°C) | 45 W |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| Mounting Type | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) |
| Operating Temperature Range | -55°C to +175°C (Tj) |
| RoHS Status | Compliant |
| Pin Count | 8 |
| RoHS Compliance | Yes |
IAUZN10S7L289ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (Kelvin source for gate return) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
| Pin EP | Thermal Pad (Drain) — Exposed thermal pad - connect to drain for heatsinking |
Safe Operating Area (SOA) - DC
Typical Applications
IAUZN10S7L289ATMA1 is suitable for 6 applications: Automotive 48V DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive LED Headlamp Driver, Battery Management OR-ing Switch, Industrial 72V Battery Protection Switch, Braking System (ABS/ESC) Motor Driver.
Automotive 48V DC-DC Converter
The IAUZN10S7L289ATMA1 is well-suited for automotive 48 V bus DC-DC converters where it switches between the 48 V rail and 12 V downstream rails. Its 100 V VDS rating provides ample headroom for 48 V transients (load dump up to ~70 V), while the 28.9 mΩ RDS(on) minimizes conduction losses at 27 A continuous current. Placed on the high-side switch position with a 10 V gate drive from an isolated gate driver, the device delivers high efficiency (>97%) at typical switching frequencies of 100-250 kHz. The S3O8 3x3 mm footprint enables compact converter designs where PCB area is constrained.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS systems, the IAUZN10S7L289ATMA1 functions as the high-current switching element in the 3-phase bridge driving the steering motor. The part's 27 A continuous current rating handles peak steering assistance loads, while the 100 V VDS rating accommodates inductive kickback from the motor windings. The AEC-Q100 qualification is mandatory for EPS safety-critical applications. Placed in a half-bridge configuration with proper gate drive, the low RDS(on) of 28.9 mΩ keeps conduction losses under 5W at full load, supporting thermal management in the sealed steering column environment.
Recommended
Automotive LED Headlamp Driver
The IAUZN10S7L289ATMA1 serves as the high-side switch in matrix LED headlamp drivers where it controls current to the LED strings via PWM dimming. Its low RDS(on) (28.9 mΩ) minimizes thermal dissipation when switching 1-3 A LED strings, while the 100 V rating protects against load-dump transients on the automotive 12 V/24 V bus. AEC-Q100 qualification is essential for safety-relevant lighting systems. Placed after the boost converter output, the MOSFET enables PWM dimming up to 1 kHz for matrix-beam functionality without audible noise concerns.
Recommended
Battery Management OR-ing Switch
In redundant battery systems, the IAUZN10S7L289ATMA1 acts as an OR-ing switch controlling current flow between two battery sources with reverse-polarity protection. The low RDS(on) (28.9 mΩ) reduces voltage drop and power dissipation in continuous conduction, while the 100 V VDS rating handles battery transients. AEC-Q100 qualification supports automotive and industrial backup power applications. The MOSFET is placed in-line with the battery output, with a gate drive circuit that responds to voltage differential for seamless source switching without arcing.
Recommended
Industrial 72V Battery Protection Switch
For industrial battery packs (24V/48V/72V nominal), the IAUZN10S7L289ATMA1 functions as a load disconnect switch providing overcurrent and short-circuit protection. The 100 V VDS rating provides 30%+ headroom over 72 V nominal battery voltages, while the 27 A continuous current rating supports typical industrial load profiles. Placed between the battery stack and the DC bus, the MOSFET is driven by a battery management IC that monitors current via shunt resistor and turns off the gate within microseconds of fault detection.
Recommended
Braking System (ABS/ESC) Motor Driver
In anti-lock braking (ABS) and electronic stability control (ESC) systems, the IAUZN10S7L289ATMA1 switches the hydraulic pump motor and valve solenoids. The 27 A current rating handles pump motor inrush currents, while the 100 V VDS rating protects against inductive switching transients from the motor coils. AEC-Q100 qualification is mandatory for this safety-critical application. The S3O8 3x3 mm footprint enables placement within the compact ABS module housing alongside the hydraulic control unit.
Recommended
Recommended Products Summary
Engineering reference data for IAUZN10S7L289ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S7L289TATMA1 | IAUCN10S7L290TATMA1 | IAUCN10S5L110TATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 80 V |
| Continuous Drain Current (ID) | 27 A | 27 A | 27 A | 11 A | 33 A |
| On-State Resistance (RDS(on) max) | 28.9 mΩ | 28.9 mΩ | 29 mΩ | 11 mΩ | 3.3 mΩ |
| Automotive Grade (AEC-Q100) | Yes | Yes | Yes | Yes | Yes |
| Technology Family | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 |
Key Differentiators
- Automotive-grade AEC-Q100 qualification in compact 3x3 mm S3O8 package (vs IAUCN10S5L110TATMA1)
- OptiMOS-7 technology with optimized figure-of-merit (RDS(on) × Qg) (vs IAUCN08S7L033ATMA1)
- 100 V VDS rating with 28.9 mΩ RDS(on) in S3O8 package (vs IAUC120N06S5L015ATMA1)
Design Notes
At 27 A continuous drain current with 28.9 mΩ RDS(on), the IAUZN10S7L289ATMA1 dissipates approximately 21 W of conduction loss in continuous operation. The S3O8 (3x3 mm) package has limited thermal mass, so a substantial PCB copper pour (at least 1 square inch on the drain thermal pad and inner layers) is required to keep junction temperature below the 175°C maximum. For high-duty-cycle applications, consider dual-side PCB cooling or forced airflow.
Layout the S3O8 package with the exposed thermal pad directly bonded to a PCB thermal land with thermal vias (typically 9-16 vias, 0.3 mm drill) connecting to internal copper planes. Keep the gate drive traces short (<5 mm) and use a Kelvin source connection (pin 1) for the gate return to minimize gate-drive ringing. Place a 10Ω gate resistor to dampen oscillations.
Do not exceed 100 V VDS — even brief transients from inductive loads can puncture the oxide. Always include a snubber or TVS clamp across the drain-source when switching inductive loads. Do not operate below VGS(th) minimum (typically 2-4 V) — insufficient gate drive causes the MOSFET to operate in the linear region, leading to thermal runaway and catastrophic failure.
Minimize source inductance by placing the gate return via adjacent to the Kelvin source pin (pin 1). Use a tight gate-drive loop and avoid sharing source current paths between power and gate drive circuits. For switching frequencies above 100 kHz, use a gate driver IC with >1 A peak source/sink current to achieve fast rise/fall times and reduce switching losses.
Compliance Information
RoHS compliant and AEC-Q100 qualified per Infineon product page (Automotive MOSFET classification). Lead-free and halogen-free packaging.
