IDK10G65C5XTMA2 - 650V 10A SiC Schottky Diode | Infineon CoolSiC G5
MPN: IDK10G65C5XTMA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.69 | $36.90 |
| 100 | $3.28 | $328.00 |
| 500 | $2.93 | $1,465.00 |
| 1,000 | $2.62 | $2,620.00 |
Drop-in alternatives for IDK10G65C5XTMA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDK10G65C5XTMA1
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IDK10G65C5XTMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC G5 thinQ SiC Schottky Diode |
| Diode Type | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V |
| Average Forward Current (IF(AV)) | 10 A (at TC=135 C) |
| Typical Forward Voltage (VF) | 1.5 V at IF=10 A |
| Configuration | Single Diode, 1 Phase, 1 Element |
| Reverse Recovery Charge (Qrr) | Near zero (SiC Schottky) |
| Maximum Junction Temperature | +175 C |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TO263-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Lead Configuration | real2pin (low thermal resistance lead frame) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| Lead Finish | Matte Tin (Sn) |
| Molding Compound | Green epoxy (UL94 V-0) |
IDK10G65C5XTMA2 Pin Configuration
| Pin 1 | Cathode (K) β Diode cathode, connects to higher-voltage side of circuit |
| Pin 2 | Anode (A) β Diode anode, connects to lower-voltage side of circuit |
| Pin Tab | Cathode (K) / Heatsink β Electrically connected to cathode; soldered to PCB copper for thermal dissipation |
Forward Current vs Forward Voltage
Typical Applications
IDK10G65C5XTMA2 is suitable for 6 applications: Power Factor Correction (PFC) Boost Stage, Totem-Pole Bridgeless PFC Rectifier, Solar String Inverter Freewheeling, EV On-Board Charger (OBC) Output Rectifier, Industrial Welding & Induction-Heating Rectifier, Telecom & Server SMPS Freewheeling.
Power Factor Correction (PFC) Boost Stage
The IDK10G65C5XTMA2's 650 V VRRM and 10 A IF(AV) make it ideal for continuous-conduction-mode boost-PFC stages in 400 V AC-line rectified SMPS designs. Its near-zero reverse-recovery charge eliminates shoot-through losses when paired with SiC MOSFETs at 100 kHz+ switching frequencies, yielding typical efficiency improvements of 0.5-1.0 percent versus silicon ultrafast rectifiers. Placed as the boost rectifier on a 390-410 V DC bus, it sustains 10 A continuous conduction at TC=135 C with the D2PAK tab soldered to adequate copper. The low VF of 1.5 V keeps conduction losses manageable in 1-3 kW telecom and server PSU applications.
Recommended
Totem-Pole Bridgeless PFC Rectifier
The IDK10G65C5XTMA2 enables high-efficiency totem-pole bridgeless PFC topologies where conventional silicon diodes cannot be used due to severe reverse-recovery losses. As the slow-leg rectifier in a 6.6 kW server SMPS, its zero Qrr eliminates shoot-through current during SiC MOSFET switching transitions, enabling 99 percent peak efficiency. The 650 V VRRM provides adequate margin above the 400 V rectified bus, while the D2PAK PG-TO263-2 package dissipates conduction losses directly into the PCB thermal plane. This configuration is now standard in 80 Plus Titanium server PSUs and 240 W USB-PD adapters.
Recommended
Solar String Inverter Freewheeling
The IDK10G65C5XTMA2 is well-suited as the freewheeling diode in residential and commercial solar string inverters operating on 600-1000 V DC PV buses. Its 650 V VRRM gives substantial margin against PV-panel open-circuit voltage transients and inverter switching overshoot, while its SiC Schottky zero-Qrr characteristic minimizes turn-on losses in the 50-100 kHz H4-bridge topology. In a 5-10 kW single-phase string inverter, the diode handles continuous conduction currents of 6-8 A with peak pulses of 15-20 A, all within its 175 C thermal envelope. The D2PAK package simplifies PCB layout versus through-hole TO-220 alternatives.
Recommended
EV On-Board Charger (OBC) Output Rectifier
The IDK10G65C5XTMA2 serves as the secondary-side output rectifier in 3.3-22 kW on-board EV chargers. With a 650 V VRRM rating, it easily handles the rectified 400 V traction-bus voltage with safety margin for transient spikes, and its 10 A average current rating supports typical 6.6 kW OBC modules in continuous conduction. In an LLC resonant topology, the diode's zero Qrr allows operation at 150-300 kHz switching frequencies, dramatically shrinking the resonant inductor and transformer versus silicon-based designs. The AEC-Q-style industrial temperature rating up to 175 C makes it suitable for under-hood automotive installations.
Recommended
Industrial Welding & Induction-Heating Rectifier
The IDK10G65C5XTMA2 is ideal for the high-frequency output rectifier stage of industrial welding machines and induction-heating converters. Its 650 V rating handles rectified 380-480 V AC mains with margin, and its zero reverse-recovery charge is critical at 100-500 kHz switching frequencies where silicon ultrafast diodes would overheat from switching losses. In a 5-15 kW induction heater, the diode sustains 8-10 A continuous output current with peak pulses reaching 30 A during heating cycles, all within the 175 C junction temperature limit. The PG-TO263-2 surface-mount package withstands the high-vibration industrial environment when properly torqued to a heatsink.
Recommended
Telecom & Server SMPS Freewheeling
The IDK10G65C5XTMA2 is a strong fit for freewheeling and clamp-recovery functions in telecom and server switched-mode power supplies where 48 V bus converters operate at 250-500 kHz. Its SiC Schottky technology provides near-zero Qrr, eliminating reverse-recovery losses that would otherwise limit efficiency in the synchronous-rectifier secondary side. The 650 V VRRM rating also gives ample margin for over-voltage events on the rectified 400 V primary bus. In a 2-3 kW 48 V DC-DC converter module, the diode handles 8-10 A average current with peak surges of 15 A during transient load steps.
Recommended
Recommended Products Summary
Engineering reference data for IDK10G65C5XTMA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDK10G65C5XTMA1 | IDH10G65C5XKSA1 | STPSC10H065G2 | CSD01060E | GB10SLT12-247 | LSIC2SD120E20CC |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-2 (D2PAK) | PG-TO263-2 (D2PAK) - same | PG-TO247-2 (through-hole) | D2PAK (PG-TO263-2) - same | D2PAK (PG-TO263-2) - same | PG-TO247-2 (through-hole) | D2PAK (PG-TO263-2) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | Wolfspeed / Cree | GeneSiC Semiconductor | Littelfuse |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V | 650 V | 650 V | 650 V | 650 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
| Typical Forward Voltage (VF) | 1.5 V at 10 A | 1.5 V at 10 A | 1.5 V at 10 A | 1.45 V at 10 A | 1.5 V at 10 A | 1.7 V at 10 A | 1.8 V at 10 A |
| Reverse Recovery Charge (Qrr) | Near zero (SiC) | Near zero (SiC) | Near zero (SiC) | Near zero (SiC) | Near zero (SiC) | Near zero (SiC) | Near zero (SiC) |
| Maximum Junction Temperature | +175 C | +175 C | +175 C | +175 C | +175 C | +175 C | +175 C |
| Technology Generation | CoolSiC G5 (5th gen) | CoolSiC G5 (5th gen) | CoolSiC G5 (5th gen) | ST SiC Gen2 | Wolfspeed Gen3 | GeneSiC Gen2 | Littelfuse Gen2 |
Key Differentiators
- CoolSiC G5 thinQ technology with real2pin lead frame (vs STPSC10H065G2 (ST Gen2))
- Higher reverse voltage rating (650 V vs 600 V) (vs CSD01060E (Wolfspeed))
- Industrial-grade temperature rating to 175 C (vs GB10SLT12-247 (1200 V SiC))
Design Notes
Estimated: At IF=10 A and VF=1.5 V, the IDK10G65C5XTMA2 dissipates approximately 15 W of conduction loss in continuous operation. With the PG-TO263-2 (D2PAK) thermal pad soldered to 2 square inches of 2 oz copper on a standard FR-4 PCB, the junction-to-ambient thermal resistance is approximately 35-40 C/W. This produces a junction temperature rise of 525-600 C above ambient at full load - well above the 175 C limit - meaning active cooling (heatsink or forced airflow) is mandatory. Calculate: P_loss = V_F x I_F; T_J = T_A + (P_loss x R_theta_JA). Use a thermal pad compound and clip-on heatsink rated for at least 10 W continuous.
Layout the IDK10G65C5XTMA2 with the D2PAK tab soldered directly to a copper pour of at least 2 square inches, using multiple thermal vias (0.3 mm drill, 1 mm pitch) to inner-layer copper planes for heat spreading. Keep the anode and cathode PCB traces short and wide to minimize parasitic inductance - the diode's high dV/dt during turn-off can otherwise cause ringing that interferes with downstream MOSFETs. Place the diode close to the switching MOSFET to minimize loop inductance in the commutation path, which is especially critical in totem-pole PFC and LLC topologies where SiC switching speeds exceed 50 V/ns.
Do not assume the IDK10G65C5XTMA2 will tolerate avalanche current - SiC Schottky diodes have no reverse-recovery but they can be destroyed by exceeding the non-repetitive peak surge current (IFSM) rating during turn-on into a capacitive load. Add an inrush-limiting thermistor or pre-charge circuit on the DC bus to limit dI/dt at startup. Also avoid exceeding the maximum junction temperature of 175 C; design with at least 25 C thermal margin to account for power-derating in enclosed enclosures. Finally, do not parallel this diode without derating - SiC Schottky forward-voltage curves have a positive temperature coefficient that aids sharing, but mismatched parallel diodes can still see unbalanced current.
Compliance Information
RoHS compliant per Infineon product page; halogen-free green molding compound per JEDEC JESD97. Industrial-grade temperature range -40 C to +175 C; not AEC-Q100 qualified. For automotive applications, refer to Infineon's dedicated automotive-grade SiC Schottky portfolio (e.g., AIDK10G65C5 series).
