SQ4532AEY-T1_GE3 - 30V Dual N+P MOSFET, AEC-Q101 | Vishay
MPN: SQ4532AEY-T1_GE3 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.28 | $1.28 |
| 10 | $1.09 | $10.90 |
| 100 | $0.86 | $86.00 |
| 500 | $0.72 | $360.00 |
| 1,000 | $0.63 | $630.00 |
SQ4532AEY-T1_GE3 Overview
A MOSFET array is a multi-die power semiconductor that places two or more MOSFETs in a single package, in this case a complementary N-channel plus P-channel pair. Complementary arrays are widely used in power management IC hierarchies for half-bridge and push-pull switching stages, load switches, and polarity-reversal circuits, where matching the two devices in one footprint reduces board area and layout parasitics.
Key features include the 30 V (D-S) breakdown rating, 20 V gate-source rating, AEC-Q101 automotive qualification, and a 175 C maximum junction temperature that supports harsh under-hood and industrial environments. The package is halogen-free and RoHS compliant, per Datasheets.com listing data, and the part is marked with Vishay LITTLE FOOT die technology for low on-resistance switching.
The complementary N+P topology means a single SOIC-8 replaces two discrete SOT-23-class FETs, cutting board space roughly in half and shortening gate-drive loops, which reduces switching ringing and EMI. The device is specified at case temperature (Tc), so designers should derate current at higher ambient temperatures using the datasheet power-dissipation curves.
Typical applications include automotive H-bridge and half-bridge motor control, DC-DC converter power stages, battery-powered load switches with polarity considerations, and industrial power distribution modules where a compact 30 V complementary switch pair is required.
Design considerations: because the N- and P-channel dies share the package thermal path, total dissipation from both devices must be budgeted against the 3.3 W (Tc) limit; verify junction temperature with Vishay AN808 mounting guidance for LITTLE FOOT SO-8 power MOSFETs.
This page synthesizes verified distributor pricing data, drop-in alternatives, pinout information, and practical design notes not consolidated in the manufacturer datasheet alone.
Drop-in alternatives for SQ4532AEY-T1_GE3 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
SQ4532AEY-T1_BE3
β Drop-Inπ Reference alternative (not in catalog)
Si4925DY-T1-E3
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
Si4562DY-T1-E3
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
SQ4532AEY-T1_GE3 Maximum Ratings & Electrical Characteristics
| Configuration | Dual MOSFET, Complementary N and P Channel |
| Drain-Source Voltage (Vdss) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (N-Channel, Tc) | 7.3 A |
| Continuous Drain Current (P-Channel, Tc) | 5.3 A |
| Power Dissipation (Tc) | 3.3 W |
| Maximum Junction Temperature | 175 C |
| Qualification | AEC-Q101 Qualified (Automotive) |
| Package | 8-SOIC (SO-8, MS-012AA) Surface Mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| Technology | Vishay LITTLE FOOT Power MOSFET |
| Product Family | MOSFET Arrays (FET, MOSFET Arrays) |
SQ4532AEY-T1_GE3 Pin Configuration
| Pin 1 | G (N-Ch) β N-channel gate |
| Pin 2 | S (N-Ch) β N-channel source |
| Pin 3 | S (N-Ch) β N-channel source |
| Pin 4 | D (N-Ch) β N-channel drain |
| Pin 5 | D (P-Ch) β P-channel drain |
| Pin 6 | S (P-Ch) β P-channel source |
| Pin 7 | S (P-Ch) β P-channel source |
| Pin 8 | G (P-Ch) β P-channel gate |
Typical Applications
SQ4532AEY-T1_GE3 is suitable for 6 applications: Automotive Half-Bridge Motor Control, DC-DC Converter Power Stage, Battery Load Switch with Reverse Protection, Industrial Power Distribution Module, Robotics and Actuator Drive, Test and Measurement Power Rails.
Automotive Half-Bridge Motor Control
The SQ4532AEY-T1_GE3 fits automotive half-bridge stages because its integrated complementary N+P pair provides both high-side and low-side switches in a single AEC-Q101-qualified SOIC-8, eliminating two discrete packages from the layout. The 30 V Vdss rating gives margin over the 14 V automotive charging rail, and the 175 C junction rating supports under-hood ambient conditions. With the P-channel on the high side, bootstrap drive circuitry is unnecessary, simplifying gate-driver selection for DC fan, flap, and small pump motors. Current capability of 7.3 A / 5.3 A (Tc) covers light motor loads; conduction losses should be checked against the 3.3 W package dissipation limit using the datasheet Rds(on) at the applied gate voltage.
Recommended
DC-DC Converter Power Stage
In 12 V input buck converters and point-of-load stages, the SQ4532AEY-T1_GE3 serves as a compact synchronous or complementary switching pair. The 30 V rating accommodates 24 V industrial bus inputs with transient margin, while the integrated pair shortens the switch-node gate loop, reducing ringing and radiated EMI compared with two separate SOT-23-class FETs. The 7.3 A N-channel rating suits output currents in the multi-ampere range at case temperature; because both dies share the package thermal path, combined switching plus conduction losses must stay within the 3.3 W (Tc) budget. Vishay LITTLE FOOT die technology provides low on-resistance for reduced conduction loss at high duty cycles.
Recommended
Battery Load Switch with Reverse Protection
The complementary topology of the SQ4532AEY-T1_GE3 enables load-switch and reverse-polarity circuits in 12 V/24 V battery systems. The P-channel device works as a high-side switch with simple ground-referenced drive and no charge pump, while the N-channel handles low-side disconnect or current-limit functions. The 30 V Vdss rating tolerates automotive load-dump transients when paired with external clamping, and AEC-Q101 qualification satisfies automotive quality flows. With 5.3 A continuous rating on the P-channel (Tc) and halogen-free, RoHS-compliant construction, the part suits body-control modules, telematics units, and battery-management distribution points where board area is constrained and reliability requirements are high.
Recommended
Industrial Power Distribution Module
Industrial 24 V distribution modules and PLC I/O cards use the SQ4532AEY-T1_GE3 as a polarity-switch or solid-state contactor element. The 30 V drain-source rating covers 24 V rails with limited margin, so designers should confirm transient suppression for inductive loads. The 175 C maximum junction temperature and 3.3 W package dissipation support enclosed-cabinet thermal environments, and the surface-mount SOIC-8 allows automated pick-and-place assembly alongside digital control circuitry. Because the N- and P-channel dies share a common footprint, both polarities of a push-pull output stage can be driven from one layout pattern, cutting board area by roughly half versus discrete implementations.
Recommended
Robotics and Actuator Drive
Small actuator and gripper drives in collaborative robots require bidirectional H-bridges built from complementary switch pairs; the SQ4532AEY-T1_GE3 supplies both polarities in one SOIC-8, enabling compact dual half-bridges with only two packages. The 7.3 A / 5.3 A ratings at case temperature cover light servo and actuator windings, while the 30 V rating accommodates 12 V and 24 V actuator buses. Short internal gate loops between dies reduce switching overshoot on the H-bridge midpoint, improving EMC in dense robot arm electronics. Thermal design should budget total simultaneous dissipation of both channels against 3.3 W (Tc), with copper pour per Vishay AN808 mounting guidance.
Recommended
Test and Measurement Power Rails
Bench instruments and automated test equipment use polarity-switching front ends and programmable load stages where the SQ4532AEY-T1_GE3's complementary pair simplifies rail-reversal and source/sink switching. The 30 V rating covers typical lab supply rails up to 24 V with margin, and the 175 C junction limit tolerates brief overload transients during fault testing. Surface-mount SOIC-8 construction integrates into dense analog control boards, and the pair's matched thermal environment keeps switch characteristics tracking over temperature, improving measurement repeatability. Designers should verify on-resistance at the applied gate drive from the Vishay datasheet to compute conduction loss in precision current paths.
Recommended
Recommended Products Summary
Engineering reference data for SQ4532AEY-T1_GE3 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | SQ4532AEY-T1_BE3 | Si4925DY-T1-E3 | Si4562DY-T1-E3 |
|---|---|---|---|---|
| Package | 8-SOIC (SO-8) | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same footprint | 8-SOIC (SO-8) - same footprint |
| Brand | Vishay Intertechnology (Siliconix) | Vishay Intertechnology (Siliconix) | Vishay Intertechnology (Siliconix) | Vishay Intertechnology (Siliconix) |
| Configuration | Dual complementary N+P | Dual complementary N+P | Dual complementary N+P | Dual complementary N+P |
Key Differentiators
- AEC-Q101 automotive qualification at 175 C (vs Si4925DY-T1-E3)
- Integrated complementary pair halves board area (vs Discrete N+P pair (e.g., IRFR4620TRLPBF + IRF9540NSTRLPBF))
- Halogen-free RoHS-compliant construction (vs SQ4532AEY-T1_BE3)
Design Notes
Both the N- and P-channel dies dissipate heat through a single SOIC-8 thermal path, so the 3.3 W (Tc) limit is shared. Estimated: with both channels conducting, sum P = I_N^2 * Rds(on)_N + I_P^2 * Rds(on)_P using datasheet Rds(on) at your applied gate voltage, then derate with the datasheet power-vs-temperature curve above 25 C case temperature. Follow Vishay AN808 ('Mounting LITTLE FOOT SO-8 Power MOSFETs') for copper-pad thermal design; maximize drain-pad copper area on both sides of the board for heat spreading.
Keep gate-drive traces short and wide, and place gate resistors close to the SOIC-8 gate pins to damp ringing, since one package serving two switches makes the shared gate-drive layout a common EMI source. The source pins (2/3 for N-channel, 6/7 for P-channel) should be paralleled on the PCB to halve source inductance and reduce di/dt-induced gate bounce. Provide a solid low-inductance ground plane and Kelvin-connect gate-drive returns at the source pins rather than remote board ground.
The 30 V Vdss rating leaves limited margin on 24 V industrial rails: an unclamped inductive kick or automotive load-dump transient can exceed breakdown instantly. Add TVS clamping on the switch node when driving inductive loads. Also, do not assume pin compatibility from other manufacturers' complementary dual SOIC-8 parts - pin maps vary between vendors, so any second source must be verified pin-for-pin against the Vishay datasheet before reusing the footprint.
Compliance Information
RoHS compliant and halogen free per Datasheets.com listing; AEC-Q101 qualified per Mouser listing (automotive discrete qualification; AEC-Q101 is the applicable standard rather than AEC-Q100). REACH and conflict-minerals status not stated in retrieved data.
