2ED2106S06FXUMA1 vs IRS21834STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2106S06FXUMA1 sa pamamagitan ng Infineon at IRS21834STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ Nakahanda
Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED2106S06FXUMA1 IRS21834STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Half-Bridge
Source Current (typ.) 0.29 A 1.9 A
Sink Current (typ.) 0.7 A 2.3 A
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 200 ns
Bilang ng Outputs 2 (1 high-side, 1 low-side) —
Number of Drivers 2 2 (high-side + low-side)
Bilang ng Pins 8 —
Packhaging PG-DSO-8-69 (DSO-8) 14-SOIC (SOIC-14)
Uri ng Pagpapasok Surface Mount Surface Mount
Bootstrap Diode Integrated —
Hanay ng Temperature na Operasyon -40C to +125C -40C to +125C
Packaging Tape & Reel —
Type ng Output Half-Bridge, Non-Inverting —
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Negative Transient Voltage Tolerance — dV/dt immune
Level ng MSL — 1 (unlimited)
Tindminan RoHS — Compliant
Lead-Free — Yes

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