2ED2106S06FXUMA1 vs IRS21834STRPBF 比較

詳細並排比較 2ED2106S06FXUMA1 由 Infineon 與 IRS21834STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中
Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 啟用中

規格比較

參數 2ED2106S06FXUMA1 IRS21834STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Half-Bridge
Source Current (typ.) 0.29 A 1.9 A
Sink Current (typ.) 0.7 A 2.3 A
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 200 ns
輸出數量 2 (1 high-side, 1 low-side) —
Number of Drivers 2 2 (high-side + low-side)
腳位數 8 —
封裝 PG-DSO-8-69 (DSO-8) 14-SOIC (SOIC-14)
安裝類型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作溫度範圍 -40C to +125C -40C to +125C
Packaging Tape & Reel —
輸出類型 Half-Bridge, Non-Inverting —
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Negative Transient Voltage Tolerance — dV/dt immune
MSL 等級 — 1 (unlimited)
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

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