BSS308PEH6327XTSA1 vs 2N7002H6327XTSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS308PEH6327XTSA1 sa pamamagitan ng Infineon at 2N7002H6327XTSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS308PEH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Uri ng Transistor | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -30 V | 60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | 300 mA (Ta) |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55C to +150C (Tj) |
| Packhaging / Kaso | PG-SOT23 (SOT-23-3) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 | — |
| Qualification | AEC-Q101 Automotive | Industrial / Commercial Grade |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical value] |
| Technology | — | OptiMOS (Planar) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Packhaging | — | PG-SOT23 (SOT-23-3) |
| Channel Mode | — | Enhancement |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |