BSS308PEH6327XTSA1 vs 2N7002H6327XTSA2 比較
詳細並排比較 BSS308PEH6327XTSA1 由 Infineon 與 2N7002H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 啟用中規格比較
| 參數 | BSS308PEH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| 電晶體類型 | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -30 V | 60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | 300 mA (Ta) |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| 工作溫度範圍 | -55 °C to +150 °C | -55C to +150C (Tj) |
| 封裝 / 外殼 | PG-SOT23 (SOT-23-3) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| Qualification | AEC-Q101 Automotive | Industrial / Commercial Grade |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical value] |
| Technology | — | OptiMOS (Planar) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 封裝 | — | PG-SOT23 (SOT-23-3) |
| Channel Mode | — | Enhancement |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |