IPN95R3K7P7ATMA1 vs IPN95R1K2P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon at IPN95R1K2P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPN95R3K7P7ATMA1 IPN95R1K2P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS P7
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V —
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) CoolMOS P7 (Super Junction)
Packhaging PG-SOT223 (3-pin + tab, surface mount) SOT-223-3 (PG-SOT223)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55 C to +150 C —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] —
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
Bilang ng Pin — 3 (2 + Tab)
Hanay ng Temperature na Operasyon — -55C to +150C
Packaging — Tape & Reel
Part Status — Active

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