IPN95R3K7P7ATMA1 vs IPN95R1K2P7ATMA1 比較

詳細並排比較 IPN95R3K7P7ATMA1 由 Infineon 與 IPN95R1K2P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 啟用中

規格比較

參數 IPN95R3K7P7ATMA1 IPN95R1K2P7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS P7
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V —
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) CoolMOS P7 (Super Junction)
封裝 PG-SOT223 (3-pin + tab, surface mount) SOT-223-3 (PG-SOT223)
安裝類型 Surface Mount Surface Mount
工作接面溫度 -55 C to +150 C —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] —
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
腳位數 — 3 (2 + Tab)
工作溫度範圍 — -55C to +150C
Packaging — Tape & Reel
Part Status — Active

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