NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
MPN: NT6AN8T6WBJ1B1 ✓ نشطNT6AN8T6WBJ1B1 نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
بدائل مباشرة لـ NT6AN8T6WBJ1B1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT6AN8T6WBJ1B1 (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
NT6AN8T0SA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G165WC-BCRC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A512M16JY-075E
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G6NCJR-VKC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$60 / وحدة
عرض ورقة البيانات ←AS4C512M16D4A-62BCN
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←W634GU6RB09J
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT6AN8T6WBJ1B1 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| حجم الذاكرة | 8 Gb (512M x 16) |
| معدل البيانات | 3200 MT/s |
| جهد التغذية | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| زمن الوصول CAS | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| العلبة | 96-ball FBGA |
| درجة حرارة التشغيل | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| حالة RoHS | Compliant |
تكوين أطراف NT6AN8T6WBJ1B1
| دبوس A1 | VDD — Power supply (1.2V) |
| دبوس A2 | DQ0 — Data I/O bit 0 |
| دبوس A3 | DQ1 — Data I/O bit 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data I/O bit 2 |
| دبوس A6 | DQ3 — Data I/O bit 3 |
| دبوس A7 | VDDQ — I/O power supply (1.2V) |
| دبوس A8 | DQ4 — Data I/O bit 4 |
| دبوس A9 | DQ5 — Data I/O bit 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data I/O bit 6 |
| دبوس A12 | DQ7 — Data I/O bit 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data I/O bit 8 |
| دبوس B3 | DQ9 — Data I/O bit 9 |
| دبوس B4 | VDDQ — I/O power supply (1.2V) |
| دبوس B5 | DQ10 — Data I/O bit 10 |
| دبوس B6 | DQ11 — Data I/O bit 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data I/O bit 12 |
| دبوس B9 | DQ13 — Data I/O bit 13 |
| دبوس B10 | VDDQ — I/O power supply (1.2V) |
| دبوس B11 | DQ14 — Data I/O bit 14 |
| دبوس B12 | DQ15 — Data I/O bit 15 |
| دبوس C1 | VDD — Power supply (1.2V) |
| دبوس C2 | A0 — Address input bit 0 |
| دبوس C3 | A1 — Address input bit 1 |
| دبوس C4 | A2 — Address input bit 2 |
| دبوس C5 | A3 — Address input bit 3 |
| دبوس C6 | A4 — Address input bit 4 |
| دبوس C7 | A5 — Address input bit 5 |
| دبوس C8 | A6 — Address input bit 6 |
| دبوس C9 | A7 — Address input bit 7 |
| دبوس C10 | A8 — Address input bit 8 |
| دبوس C11 | A9 — Address input bit 9 |
| دبوس C12 | VSS — Ground |
| دبوس D1 | VSS — Ground |
| دبوس D2 | A10/AP — Address input bit 10 / Auto-precharge |
| دبوس D3 | A11 — Address input bit 11 |
| دبوس D4 | A12/BC — Address input bit 12 / Burst chop |
| دبوس D5 | A13 — Address input bit 13 |
| دبوس D6 | A14 — Address input bit 14 |
| دبوس D7 | A15 — Address input bit 15 |
| دبوس D8 | BA0 — Bank address bit 0 |
| دبوس D9 | BA1 — Bank address bit 1 |
| دبوس D10 | BA2 — Bank address bit 2 |
| دبوس D11 | BG0 — Bank group bit 0 |
| دبوس D12 | BG1 — Bank group bit 1 |
| دبوس E1 | VDDQ — I/O power supply (1.2V) |
| دبوس E2 | CK_t — Clock input (true) |
| دبوس E3 | CK_c — Clock input (complement) |
| دبوس E4 | CKE — Clock enable |
| دبوس E5 | CS_n — Chip select (active low) |
| دبوس E6 | ODT — On-die termination control |
| دبوس E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| دبوس E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| دبوس E9 | WE_n/A14 — Write enable / Address bit 14 |
| دبوس E10 | RESET_n — Reset (active low) |
| دبوس E11 | VDD — Power supply (1.2V) |
| دبوس E12 | VSS — Ground |
| دبوس F1 | VSS — Ground |
| دبوس F2 | DM0 — Data mask for DQ0-7 |
| دبوس F3 | DQS0_t — Data strobe 0 (true) |
| دبوس F4 | DQS0_c — Data strobe 0 (complement) |
| دبوس F5 | VDDQ — I/O power supply (1.2V) |
| دبوس F6 | DM1 — Data mask for DQ8-15 |
| دبوس F7 | DQS1_t — Data strobe 1 (true) |
| دبوس F8 | DQS1_c — Data strobe 1 (complement) |
| دبوس F9 | VSS — Ground |
| دبوس F10 | TDQS_t — Termination data strobe (true) |
| دبوس F11 | TDQS_c — Termination data strobe (complement) |
| دبوس F12 | VDDQ — I/O power supply (1.2V) |
| دبوس G1 | VDD — Power supply (1.2V) |
| دبوس G2 | VSS — Ground |
| دبوس G3 | VDDQ — I/O power supply (1.2V) |
| دبوس G4 | VSS — Ground |
| دبوس G5 | VDDQ — I/O power supply (1.2V) |
| دبوس G6 | VSS — Ground |
| دبوس G7 | VDDQ — I/O power supply (1.2V) |
| دبوس G8 | VSS — Ground |
| دبوس G9 | VDDQ — I/O power supply (1.2V) |
| دبوس G10 | VSS — Ground |
| دبوس G11 | VDDQ — I/O power supply (1.2V) |
| دبوس G12 | VSS — Ground |
| دبوس H1 | VSS — Ground |
| دبوس H2 | VDD — Power supply (1.2V) |
| دبوس H3 | VSS — Ground |
| دبوس H4 | VDD — Power supply (1.2V) |
| دبوس H5 | VSS — Ground |
| دبوس H6 | VDD — Power supply (1.2V) |
| دبوس H7 | VSS — Ground |
| دبوس H8 | VDD — Power supply (1.2V) |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDD — Power supply (1.2V) |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDD — Power supply (1.2V) |
| دبوس J1 | VDDQ — I/O power supply (1.2V) |
| دبوس J2 | VSS — Ground |
| دبوس J3 | VDDQ — I/O power supply (1.2V) |
| دبوس J4 | VSS — Ground |
| دبوس J5 | VDDQ — I/O power supply (1.2V) |
| دبوس J6 | VSS — Ground |
| دبوس J7 | VDDQ — I/O power supply (1.2V) |
| دبوس J8 | VSS — Ground |
| دبوس J9 | VDDQ — I/O power supply (1.2V) |
| دبوس J10 | VSS — Ground |
| دبوس J11 | VDDQ — I/O power supply (1.2V) |
| دبوس J12 | VSS — Ground |
التطبيقات النموذجية
NT6AN8T6WBJ1B1 مناسب لـ 6 التطبيقs: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
موصى به
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
موصى به
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
موصى به
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
موصى به
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
موصى به
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT6AN8T6WBJ1B1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
أبرز الفروقات
- Cost-effective 8Gb DDR4-3200 x16 solution (مقابلK4A8G165WC-BCRC)
- Reliable supply chain from Nanya (مقابلMT40A512M16JY-075E)
- Pin-compatible with major brands (مقابلH5AN8G6NCJR-VKC)
ملاحظات التصميم
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
معلومات الامتثال
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
