NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
MPN: NT6AN8T6WBJ1B1 ✓ Hoạt độngNT6AN8T6WBJ1B1 Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
Bộ thay thế dễ dàng lắp đặt cho NT6AN8T6WBJ1B1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với NT6AN8T6WBJ1B1 (cùng hình factor và footprint) — khác nhau ở Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
NT6AN8T0SA
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4A8G165WC-BCRC
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →MT40A512M16JY-075E
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →H5AN8G6NCJR-VKC
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$60 / Đơn vị
Xem tài liệu →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →W634GU6RB09J
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →NT6AN8T6WBJ1B1 Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Kích thước bộ nhớ | 8 Gb (512M x 16) |
| Tốc độ dữ liệu | 3200 MT/s |
| Điện áp cung cấp | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Latency CAS | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| Hộp | 96-ball FBGA |
| Nhiệt độ hoạt động | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| Trạng thái RoHS | Compliant |
Cấu hình chân NT6AN8T6WBJ1B1
| Chân A1 | VDD — Power supply (1.2V) |
| Chân A2 | DQ0 — Data I/O bit 0 |
| Chân A3 | DQ1 — Data I/O bit 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data I/O bit 2 |
| Chân A6 | DQ3 — Data I/O bit 3 |
| Chân A7 | VDDQ — I/O power supply (1.2V) |
| Chân A8 | DQ4 — Data I/O bit 4 |
| Chân A9 | DQ5 — Data I/O bit 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data I/O bit 6 |
| Chân A12 | DQ7 — Data I/O bit 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data I/O bit 8 |
| Chân B3 | DQ9 — Data I/O bit 9 |
| Chân B4 | VDDQ — I/O power supply (1.2V) |
| Chân B5 | DQ10 — Data I/O bit 10 |
| Chân B6 | DQ11 — Data I/O bit 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data I/O bit 12 |
| Chân B9 | DQ13 — Data I/O bit 13 |
| Chân B10 | VDDQ — I/O power supply (1.2V) |
| Chân B11 | DQ14 — Data I/O bit 14 |
| Chân B12 | DQ15 — Data I/O bit 15 |
| Chân C1 | VDD — Power supply (1.2V) |
| Chân C2 | A0 — Address input bit 0 |
| Chân C3 | A1 — Address input bit 1 |
| Chân C4 | A2 — Address input bit 2 |
| Chân C5 | A3 — Address input bit 3 |
| Chân C6 | A4 — Address input bit 4 |
| Chân C7 | A5 — Address input bit 5 |
| Chân C8 | A6 — Address input bit 6 |
| Chân C9 | A7 — Address input bit 7 |
| Chân C10 | A8 — Address input bit 8 |
| Chân C11 | A9 — Address input bit 9 |
| Chân C12 | VSS — Ground |
| Chân D1 | VSS — Ground |
| Chân D2 | A10/AP — Address input bit 10 / Auto-precharge |
| Chân D3 | A11 — Address input bit 11 |
| Chân D4 | A12/BC — Address input bit 12 / Burst chop |
| Chân D5 | A13 — Address input bit 13 |
| Chân D6 | A14 — Address input bit 14 |
| Chân D7 | A15 — Address input bit 15 |
| Chân D8 | BA0 — Bank address bit 0 |
| Chân D9 | BA1 — Bank address bit 1 |
| Chân D10 | BA2 — Bank address bit 2 |
| Chân D11 | BG0 — Bank group bit 0 |
| Chân D12 | BG1 — Bank group bit 1 |
| Chân E1 | VDDQ — I/O power supply (1.2V) |
| Chân E2 | CK_t — Clock input (true) |
| Chân E3 | CK_c — Clock input (complement) |
| Chân E4 | CKE — Clock enable |
| Chân E5 | CS_n — Chip select (active low) |
| Chân E6 | ODT — On-die termination control |
| Chân E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| Chân E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| Chân E9 | WE_n/A14 — Write enable / Address bit 14 |
| Chân E10 | RESET_n — Reset (active low) |
| Chân E11 | VDD — Power supply (1.2V) |
| Chân E12 | VSS — Ground |
| Chân F1 | VSS — Ground |
| Chân F2 | DM0 — Data mask for DQ0-7 |
| Chân F3 | DQS0_t — Data strobe 0 (true) |
| Chân F4 | DQS0_c — Data strobe 0 (complement) |
| Chân F5 | VDDQ — I/O power supply (1.2V) |
| Chân F6 | DM1 — Data mask for DQ8-15 |
| Chân F7 | DQS1_t — Data strobe 1 (true) |
| Chân F8 | DQS1_c — Data strobe 1 (complement) |
| Chân F9 | VSS — Ground |
| Chân F10 | TDQS_t — Termination data strobe (true) |
| Chân F11 | TDQS_c — Termination data strobe (complement) |
| Chân F12 | VDDQ — I/O power supply (1.2V) |
| Chân G1 | VDD — Power supply (1.2V) |
| Chân G2 | VSS — Ground |
| Chân G3 | VDDQ — I/O power supply (1.2V) |
| Chân G4 | VSS — Ground |
| Chân G5 | VDDQ — I/O power supply (1.2V) |
| Chân G6 | VSS — Ground |
| Chân G7 | VDDQ — I/O power supply (1.2V) |
| Chân G8 | VSS — Ground |
| Chân G9 | VDDQ — I/O power supply (1.2V) |
| Chân G10 | VSS — Ground |
| Chân G11 | VDDQ — I/O power supply (1.2V) |
| Chân G12 | VSS — Ground |
| Chân H1 | VSS — Ground |
| Chân H2 | VDD — Power supply (1.2V) |
| Chân H3 | VSS — Ground |
| Chân H4 | VDD — Power supply (1.2V) |
| Chân H5 | VSS — Ground |
| Chân H6 | VDD — Power supply (1.2V) |
| Chân H7 | VSS — Ground |
| Chân H8 | VDD — Power supply (1.2V) |
| Chân H9 | VSS — Ground |
| Chân H10 | VDD — Power supply (1.2V) |
| Chân H11 | VSS — Ground |
| Chân H12 | VDD — Power supply (1.2V) |
| Chân J1 | VDDQ — I/O power supply (1.2V) |
| Chân J2 | VSS — Ground |
| Chân J3 | VDDQ — I/O power supply (1.2V) |
| Chân J4 | VSS — Ground |
| Chân J5 | VDDQ — I/O power supply (1.2V) |
| Chân J6 | VSS — Ground |
| Chân J7 | VDDQ — I/O power supply (1.2V) |
| Chân J8 | VSS — Ground |
| Chân J9 | VDDQ — I/O power supply (1.2V) |
| Chân J10 | VSS — Ground |
| Chân J11 | VDDQ — I/O power supply (1.2V) |
| Chân J12 | VSS — Ground |
Ứng dụng tiêu biểu
NT6AN8T6WBJ1B1 phù hợp cho 6 Áp dụngs: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
Được đề xuất
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
Được đề xuất
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
Được đề xuất
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
Được đề xuất
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
Được đề xuất
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho NT6AN8T6WBJ1B1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Bảo phân biệt quan trọng
- Cost-effective 8Gb DDR4-3200 x16 solution (vsK4A8G165WC-BCRC)
- Reliable supply chain from Nanya (vsMT40A512M16JY-075E)
- Pin-compatible with major brands (vsH5AN8G6NCJR-VKC)
Ghi chú thiết kế
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
Thông tin tuân thủ
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
