NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
Teilenummer: NT6AN8T6WBJ1B1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.1 | $1.010,00 |
| 500 | $9.3 | $4.650,00 |
| 1.000 | $8.75 | $8.750,00 |
NT6AN8T6WBJ1B1 Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
Drop-in-Alternativen für NT6AN8T6WBJ1B1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit NT6AN8T6WBJ1B1 (gleiche Bauform und Footprint) – abweichend in Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NT6AN8T0SA
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.88 / Stück
Datenblatt ansehen →K4A8G165WC-BCRC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$23 / Stück
Datenblatt ansehen →MT40A512M16JY-075E
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$30.5 / Stück
Datenblatt ansehen →H5AN8G6NCJR-VKC
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$60 / Stück
Datenblatt ansehen →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$7.2 / Stück
Datenblatt ansehen →W634GU6RB09J
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$8.1 / Stück
Datenblatt ansehen →NT6AN8T6WBJ1B1 Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Speichergröße | 8 Gb (512M x 16) |
| Datenrate | 3200 MT/s |
| Versorgungsspannung | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| CAS-Latenz | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| Gehäuse | 96-ball FBGA |
| Betriebstemperatur | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| RoHS-Status | Compliant |
NT6AN8T6WBJ1B1 Pin-Konfiguration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data I/O bit 0 |
| Pin A3 | DQ1 — Data I/O bit 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data I/O bit 2 |
| Pin A6 | DQ3 — Data I/O bit 3 |
| Pin A7 | VDDQ — I/O power supply (1.2V) |
| Pin A8 | DQ4 — Data I/O bit 4 |
| Pin A9 | DQ5 — Data I/O bit 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data I/O bit 6 |
| Pin A12 | DQ7 — Data I/O bit 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data I/O bit 8 |
| Pin B3 | DQ9 — Data I/O bit 9 |
| Pin B4 | VDDQ — I/O power supply (1.2V) |
| Pin B5 | DQ10 — Data I/O bit 10 |
| Pin B6 | DQ11 — Data I/O bit 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data I/O bit 12 |
| Pin B9 | DQ13 — Data I/O bit 13 |
| Pin B10 | VDDQ — I/O power supply (1.2V) |
| Pin B11 | DQ14 — Data I/O bit 14 |
| Pin B12 | DQ15 — Data I/O bit 15 |
| Pin C1 | VDD — Power supply (1.2V) |
| Pin C2 | A0 — Address input bit 0 |
| Pin C3 | A1 — Address input bit 1 |
| Pin C4 | A2 — Address input bit 2 |
| Pin C5 | A3 — Address input bit 3 |
| Pin C6 | A4 — Address input bit 4 |
| Pin C7 | A5 — Address input bit 5 |
| Pin C8 | A6 — Address input bit 6 |
| Pin C9 | A7 — Address input bit 7 |
| Pin C10 | A8 — Address input bit 8 |
| Pin C11 | A9 — Address input bit 9 |
| Pin C12 | VSS — Ground |
| Pin D1 | VSS — Ground |
| Pin D2 | A10/AP — Address input bit 10 / Auto-precharge |
| Pin D3 | A11 — Address input bit 11 |
| Pin D4 | A12/BC — Address input bit 12 / Burst chop |
| Pin D5 | A13 — Address input bit 13 |
| Pin D6 | A14 — Address input bit 14 |
| Pin D7 | A15 — Address input bit 15 |
| Pin D8 | BA0 — Bank address bit 0 |
| Pin D9 | BA1 — Bank address bit 1 |
| Pin D10 | BA2 — Bank address bit 2 |
| Pin D11 | BG0 — Bank group bit 0 |
| Pin D12 | BG1 — Bank group bit 1 |
| Pin E1 | VDDQ — I/O power supply (1.2V) |
| Pin E2 | CK_t — Clock input (true) |
| Pin E3 | CK_c — Clock input (complement) |
| Pin E4 | CKE — Clock enable |
| Pin E5 | CS_n — Chip select (active low) |
| Pin E6 | ODT — On-die termination control |
| Pin E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| Pin E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| Pin E9 | WE_n/A14 — Write enable / Address bit 14 |
| Pin E10 | RESET_n — Reset (active low) |
| Pin E11 | VDD — Power supply (1.2V) |
| Pin E12 | VSS — Ground |
| Pin F1 | VSS — Ground |
| Pin F2 | DM0 — Data mask for DQ0-7 |
| Pin F3 | DQS0_t — Data strobe 0 (true) |
| Pin F4 | DQS0_c — Data strobe 0 (complement) |
| Pin F5 | VDDQ — I/O power supply (1.2V) |
| Pin F6 | DM1 — Data mask for DQ8-15 |
| Pin F7 | DQS1_t — Data strobe 1 (true) |
| Pin F8 | DQS1_c — Data strobe 1 (complement) |
| Pin F9 | VSS — Ground |
| Pin F10 | TDQS_t — Termination data strobe (true) |
| Pin F11 | TDQS_c — Termination data strobe (complement) |
| Pin F12 | VDDQ — I/O power supply (1.2V) |
| Pin G1 | VDD — Power supply (1.2V) |
| Pin G2 | VSS — Ground |
| Pin G3 | VDDQ — I/O power supply (1.2V) |
| Pin G4 | VSS — Ground |
| Pin G5 | VDDQ — I/O power supply (1.2V) |
| Pin G6 | VSS — Ground |
| Pin G7 | VDDQ — I/O power supply (1.2V) |
| Pin G8 | VSS — Ground |
| Pin G9 | VDDQ — I/O power supply (1.2V) |
| Pin G10 | VSS — Ground |
| Pin G11 | VDDQ — I/O power supply (1.2V) |
| Pin G12 | VSS — Ground |
| Pin H1 | VSS — Ground |
| Pin H2 | VDD — Power supply (1.2V) |
| Pin H3 | VSS — Ground |
| Pin H4 | VDD — Power supply (1.2V) |
| Pin H5 | VSS — Ground |
| Pin H6 | VDD — Power supply (1.2V) |
| Pin H7 | VSS — Ground |
| Pin H8 | VDD — Power supply (1.2V) |
| Pin H9 | VSS — Ground |
| Pin H10 | VDD — Power supply (1.2V) |
| Pin H11 | VSS — Ground |
| Pin H12 | VDD — Power supply (1.2V) |
| Pin J1 | VDDQ — I/O power supply (1.2V) |
| Pin J2 | VSS — Ground |
| Pin J3 | VDDQ — I/O power supply (1.2V) |
| Pin J4 | VSS — Ground |
| Pin J5 | VDDQ — I/O power supply (1.2V) |
| Pin J6 | VSS — Ground |
| Pin J7 | VDDQ — I/O power supply (1.2V) |
| Pin J8 | VSS — Ground |
| Pin J9 | VDDQ — I/O power supply (1.2V) |
| Pin J10 | VSS — Ground |
| Pin J11 | VDDQ — I/O power supply (1.2V) |
| Pin J12 | VSS — Ground |
Typische Anwendungen
NT6AN8T6WBJ1B1 ist geeignet für 6 Anwendungs: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
Empfohlen
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
Empfohlen
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
Empfohlen
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
Empfohlen
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
Empfohlen
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NT6AN8T6WBJ1B1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Wichtigste Unterscheidungsmerkmale
- Cost-effective 8Gb DDR4-3200 x16 solution (vs. K4A8G165WC-BCRC)
- Reliable supply chain from Nanya (vs. MT40A512M16JY-075E)
- Pin-compatible with major brands (vs. H5AN8G6NCJR-VKC)
Designhinweise
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
Compliance-Informationen
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
