NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
N.º da peça: NT6AN8T6WBJ1B1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.1 | $1.010,00 |
| 500 | $9.3 | $4.650,00 |
| 1.000 | $8.75 | $8.750,00 |
NT6AN8T6WBJ1B1 Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
Alternativas drop-in para NT6AN8T6WBJ1B1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT6AN8T6WBJ1B1 (mesmo formato e footprint) — diferindo em Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT6AN8T0SA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.88 / unidade
Ver ficha técnica →K4A8G165WC-BCRC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$23 / unidade
Ver ficha técnica →MT40A512M16JY-075E
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$30.5 / unidade
Ver ficha técnica →H5AN8G6NCJR-VKC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$60 / unidade
Ver ficha técnica →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$7.2 / unidade
Ver ficha técnica →W634GU6RB09J
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$8.1 / unidade
Ver ficha técnica →NT6AN8T6WBJ1B1 Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Tamanho da memória | 8 Gb (512M x 16) |
| Taxa de dados | 3200 MT/s |
| Tensão de alimentação | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Latência CAS | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| Encapsulamento | 96-ball FBGA |
| Temperatura de operação | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| Status RoHS | Compliant |
Configuração de pinos do NT6AN8T6WBJ1B1
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data I/O bit 0 |
| Pino A3 | DQ1 — Data I/O bit 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data I/O bit 2 |
| Pino A6 | DQ3 — Data I/O bit 3 |
| Pino A7 | VDDQ — I/O power supply (1.2V) |
| Pino A8 | DQ4 — Data I/O bit 4 |
| Pino A9 | DQ5 — Data I/O bit 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data I/O bit 6 |
| Pino A12 | DQ7 — Data I/O bit 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data I/O bit 8 |
| Pino B3 | DQ9 — Data I/O bit 9 |
| Pino B4 | VDDQ — I/O power supply (1.2V) |
| Pino B5 | DQ10 — Data I/O bit 10 |
| Pino B6 | DQ11 — Data I/O bit 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data I/O bit 12 |
| Pino B9 | DQ13 — Data I/O bit 13 |
| Pino B10 | VDDQ — I/O power supply (1.2V) |
| Pino B11 | DQ14 — Data I/O bit 14 |
| Pino B12 | DQ15 — Data I/O bit 15 |
| Pino C1 | VDD — Power supply (1.2V) |
| Pino C2 | A0 — Address input bit 0 |
| Pino C3 | A1 — Address input bit 1 |
| Pino C4 | A2 — Address input bit 2 |
| Pino C5 | A3 — Address input bit 3 |
| Pino C6 | A4 — Address input bit 4 |
| Pino C7 | A5 — Address input bit 5 |
| Pino C8 | A6 — Address input bit 6 |
| Pino C9 | A7 — Address input bit 7 |
| Pino C10 | A8 — Address input bit 8 |
| Pino C11 | A9 — Address input bit 9 |
| Pino C12 | VSS — Ground |
| Pino D1 | VSS — Ground |
| Pino D2 | A10/AP — Address input bit 10 / Auto-precharge |
| Pino D3 | A11 — Address input bit 11 |
| Pino D4 | A12/BC — Address input bit 12 / Burst chop |
| Pino D5 | A13 — Address input bit 13 |
| Pino D6 | A14 — Address input bit 14 |
| Pino D7 | A15 — Address input bit 15 |
| Pino D8 | BA0 — Bank address bit 0 |
| Pino D9 | BA1 — Bank address bit 1 |
| Pino D10 | BA2 — Bank address bit 2 |
| Pino D11 | BG0 — Bank group bit 0 |
| Pino D12 | BG1 — Bank group bit 1 |
| Pino E1 | VDDQ — I/O power supply (1.2V) |
| Pino E2 | CK_t — Clock input (true) |
| Pino E3 | CK_c — Clock input (complement) |
| Pino E4 | CKE — Clock enable |
| Pino E5 | CS_n — Chip select (active low) |
| Pino E6 | ODT — On-die termination control |
| Pino E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| Pino E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| Pino E9 | WE_n/A14 — Write enable / Address bit 14 |
| Pino E10 | RESET_n — Reset (active low) |
| Pino E11 | VDD — Power supply (1.2V) |
| Pino E12 | VSS — Ground |
| Pino F1 | VSS — Ground |
| Pino F2 | DM0 — Data mask for DQ0-7 |
| Pino F3 | DQS0_t — Data strobe 0 (true) |
| Pino F4 | DQS0_c — Data strobe 0 (complement) |
| Pino F5 | VDDQ — I/O power supply (1.2V) |
| Pino F6 | DM1 — Data mask for DQ8-15 |
| Pino F7 | DQS1_t — Data strobe 1 (true) |
| Pino F8 | DQS1_c — Data strobe 1 (complement) |
| Pino F9 | VSS — Ground |
| Pino F10 | TDQS_t — Termination data strobe (true) |
| Pino F11 | TDQS_c — Termination data strobe (complement) |
| Pino F12 | VDDQ — I/O power supply (1.2V) |
| Pino G1 | VDD — Power supply (1.2V) |
| Pino G2 | VSS — Ground |
| Pino G3 | VDDQ — I/O power supply (1.2V) |
| Pino G4 | VSS — Ground |
| Pino G5 | VDDQ — I/O power supply (1.2V) |
| Pino G6 | VSS — Ground |
| Pino G7 | VDDQ — I/O power supply (1.2V) |
| Pino G8 | VSS — Ground |
| Pino G9 | VDDQ — I/O power supply (1.2V) |
| Pino G10 | VSS — Ground |
| Pino G11 | VDDQ — I/O power supply (1.2V) |
| Pino G12 | VSS — Ground |
| Pino H1 | VSS — Ground |
| Pino H2 | VDD — Power supply (1.2V) |
| Pino H3 | VSS — Ground |
| Pino H4 | VDD — Power supply (1.2V) |
| Pino H5 | VSS — Ground |
| Pino H6 | VDD — Power supply (1.2V) |
| Pino H7 | VSS — Ground |
| Pino H8 | VDD — Power supply (1.2V) |
| Pino H9 | VSS — Ground |
| Pino H10 | VDD — Power supply (1.2V) |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply (1.2V) |
| Pino J1 | VDDQ — I/O power supply (1.2V) |
| Pino J2 | VSS — Ground |
| Pino J3 | VDDQ — I/O power supply (1.2V) |
| Pino J4 | VSS — Ground |
| Pino J5 | VDDQ — I/O power supply (1.2V) |
| Pino J6 | VSS — Ground |
| Pino J7 | VDDQ — I/O power supply (1.2V) |
| Pino J8 | VSS — Ground |
| Pino J9 | VDDQ — I/O power supply (1.2V) |
| Pino J10 | VSS — Ground |
| Pino J11 | VDDQ — I/O power supply (1.2V) |
| Pino J12 | VSS — Ground |
Aplicações típicas
NT6AN8T6WBJ1B1 é adequado para 6 aplicaçãos: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
Recomendado
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
Recomendado
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
Recomendado
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT6AN8T6WBJ1B1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Principais diferenciais
- Cost-effective 8Gb DDR4-3200 x16 solution (vs K4A8G165WC-BCRC)
- Reliable supply chain from Nanya (vs MT40A512M16JY-075E)
- Pin-compatible with major brands (vs H5AN8G6NCJR-VKC)
Notas de projeto
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
Informações de conformidade
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
