IPL65R230C7AUMA1 vs IPD65R225C7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL65R230C7AUMA1 disebabkan oleh Infineon dan IPD65R225C7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPL65R230C7AUMA1 | IPD65R225C7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS C7) | Super-junction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 10 A | — |
| Power Dissipation (PD) at Tc | 67 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 230 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical at VGS=10V] | — |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | PG-VSON-4 (surface mount, 4 pins) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated, per datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes (per Infineon product page) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDSS) | — | 650 V |
| Continuous Drain Current (ID) at TC | — | 11 A |
| Power Dissipation (PD) at TC | — | 63 W |
| On-Resistance RDS(on) max | — | 225 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Bilangan Pin | — | 3 (2 + tab) |
| Avalanche Energy Rated | — | Yes (per datasheet) |