IPL65R230C7AUMA1 vs IPD65R225C7ATMA1 Perbandingan

Perbandingan bersamaan detil IPL65R230C7AUMA1 dari Infineon dan IPD65R225C7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL65R230C7AUMA1 IPD65R225C7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS C7) Super-junction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID) at Tc 10 A —
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
Suhu Hubung Kerja -55 C to +150 C —
Paket PG-VSON-4 (surface mount, 4 pins) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
Status RoHS Compliant Compliant
Bebas Halogen Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
Rentang Suhu Kerja — -55°C to +150°C
Jumlah Pin — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

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