IPL65R230C7AUMA1 vs IPD65R225C7ATMA1 比較
詳細並排比較 IPL65R230C7AUMA1 由 Infineon 與 IPD65R225C7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPL65R230C7AUMA1 | IPD65R225C7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS C7) | Super-junction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 10 A | — |
| Power Dissipation (PD) at Tc | 67 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 230 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical at VGS=10V] | — |
| 工作接面溫度 | -55 C to +150 C | — |
| 封裝 | PG-VSON-4 (surface mount, 4 pins) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated, per datasheet) | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes (per Infineon product page) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDSS) | — | 650 V |
| Continuous Drain Current (ID) at TC | — | 11 A |
| Power Dissipation (PD) at TC | — | 63 W |
| On-Resistance RDS(on) max | — | 225 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| 工作溫度範圍 | — | -55°C to +150°C |
| 腳位數 | — | 3 (2 + tab) |
| Avalanche Energy Rated | — | Yes (per datasheet) |