H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
Référence : H5TC4G63AFR-PBI ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
H5TC4G63AFR-PBI Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is commonly used in servers, routers, and industrial PCs. DDR3L is backward compatible with DDR3 slots in many designs, making it a versatile choice for memory upgrades.
Key features include a 16-bit I/O width, 8 internal banks, and a burst length of 8 (BL8) with on-die termination (ODT) and programmable CAS latency. The device supports auto-refresh and self-refresh modes, with a typical refresh period of 7.8us at 85°C. The industrial temperature grade ensures reliable operation in harsh environments, and the 96-ball FBGA package provides a compact footprint for space-constrained designs.
The H5TC4G63AFR-PBI uses a CMOS process technology and features a pseudo-open-drain output driver with adjustable impedance. It includes a DLL (Delay-Locked Loop) for precise timing alignment and supports write leveling for improved signal integrity. The memory operates from a single 1.35V supply, with an on-chip voltage regulator for the core, reducing external component count.
Typical applications include network routers and switches, industrial automation controllers, embedded computing modules, and test and measurement equipment. Its low voltage and high density make it ideal for power-sensitive systems that require large memory capacity.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a clean clock signal for reliable operation.
Alternatives de remplacement direct pour H5TC4G63AFR-PBI — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63AFR-PBI (même facteur de forme et même empreinte) — différant par Package, Data Rate, Burst Length, Supply Voltage, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63AFR-PBR
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Voir la fiche technique →H5TC4G63CFR-PBA
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Voir la fiche technique →MT41K256M16HA-125
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Voir la fiche technique →MT41K256M16RE-125:D
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Voir la fiche technique →IS43TR16256AL-125KBLI-TR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.25 / unité
Voir la fiche technique →NT5CC256M16ER-EKI
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$16.7045 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →H5TC4G63AFR-PBI Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Organisation de la mémoire | 256M x 16 |
| Total Memory Size | 4 Gb |
| Débit de données | DDR3-1600 (PC3L-12800) |
| Tension d'alimentation | 1.35 V |
| Number of Banks | 8 |
| Burst Length | 8 (BL8) |
| Latence CAS | Programmable |
| On-Die Termination (ODT) | Yes |
| Refresh Period | 7.8 us at 85°C |
| Plage de température de fonctionnement | -40°C to +95°C |
| Boîtier | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Type de montage | Surface Mount |
| Number of Terminals | 96 |
| Statut RoHS | Compliant |
Configuration des broches de H5TC4G63AFR-PBI
| Broche A1 | VDD — Power supply for core logic |
| Broche A2 | VSS — Ground |
| Broche A3 | DQ0 — Data input/output bit 0 |
| Broche A4 | DQ1 — Data input/output bit 1 |
| Broche A5 | VDDQ — Power supply for I/O |
| Broche A6 | VSSQ — Ground for I/O |
| Broche A7 | DQ2 — Data input/output bit 2 |
| Broche A8 | DQ3 — Data input/output bit 3 |
| Broche A9 | VDD — Power supply for core logic |
| Broche A10 | VSS — Ground |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ4 — Data input/output bit 4 |
| Broche B3 | DQ5 — Data input/output bit 5 |
| Broche B4 | VDDQ — Power supply for I/O |
| Broche B5 | VSSQ — Ground for I/O |
| Broche B6 | DQ6 — Data input/output bit 6 |
| Broche B7 | DQ7 — Data input/output bit 7 |
| Broche B8 | VDD — Power supply for core logic |
| Broche B9 | VSS — Ground |
| Broche B10 | CK — Clock input |
Applications typiques
H5TC4G63AFR-PBI convient pour 6 applications: Network Routers and Switches, Industrial Automation Controllers, Embedded Computing Modules, Test and Measurement Equipment, Networking Appliances, Medical Monitoring Devices.
Network Routers and Switches
The H5TC4G63AFR-PBI provides 4Gb DDR3L memory for packet buffering and routing tables in network equipment. Its 1.35V operation reduces power consumption in 24/7 operation, and the industrial temperature range ensures reliability in telecom cabinets. The 16-bit interface simplifies PCB routing, and the 96-ball FBGA package saves board space. With DDR3-1600 speed, it handles high-throughput packet processing without bottlenecking the CPU.
Recommandé
Industrial Automation Controllers
In industrial PLCs and robotics controllers, the H5TC4G63AFR-PBI offers reliable memory for real-time control algorithms and data logging. Its -40°C to +95°C range withstands factory floor temperatures, and the low 1.35V supply reduces heat generation in sealed enclosures. The 256Mx16 organization provides ample storage for program code and sensor data. The device's on-die termination improves signal integrity in noisy industrial environments.
Recommandé
Embedded Computing Modules
The H5TC4G63AFR-PBI is ideal for single-board computers and embedded modules that require a balance of performance and power efficiency. Its 4Gb capacity supports Linux-based applications, and the 1.35V operation extends battery life in portable systems. The 96-ball FBGA package is compatible with standard manufacturing processes, and the industrial temperature grade allows deployment in outdoor kiosks and digital signage. The DDR3-1600 speed ensures smooth multitasking.
Recommandé
Test and Measurement Equipment
In oscilloscopes, spectrum analyzers, and data acquisition systems, the H5TC4G63AFR-PBI provides high-speed memory for waveform capture and processing. Its DDR3-1600 data rate enables fast sampling, and the 16-bit interface matches ADC output widths. The industrial temperature range ensures accuracy in lab and field environments. The low 1.35V supply reduces noise coupling into analog front-ends, preserving measurement integrity.
Recommandé
Networking Appliances
The H5TC4G63AFR-PBI is used in firewalls, VPN concentrators, and load balancers for session state storage and packet buffering. Its 4Gb density supports large connection tables, and the 1.35V operation reduces power in dense chassis. The industrial temperature range is suitable for server rooms with variable cooling. The device's burst length of 8 optimizes throughput for network traffic patterns.
Recommandé
Medical Monitoring Devices
In patient monitors and diagnostic equipment, the H5TC4G63AFR-PBI provides reliable memory for real-time data processing and storage. Its industrial temperature range ensures operation in clinical environments, and the low 1.35V supply is suitable for battery-powered portable devices. The 4Gb capacity supports high-resolution waveform storage, and the 16-bit interface simplifies integration with medical-grade MCUs. The device's low power consumption extends battery life.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63AFR-PBI — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63AFR-PBR | H5TC4G63CFR-PBA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball FBGA (same) | 96-ball FBGA (same) | 96-ball FBGA (same) |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | DDR3-1600 | DDR3-1600 | DDR3-1600 | DDR3-1600 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Temperature Range | -40°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
Principaux différenciateurs
- Industrial temperature grade (vs H5TC4G63AFR-PBR)
- Low voltage operation (vs MT41K256M16HA-125)
- Pin compatibility with newer Hynix parts (vs H5TC4G63CFR-PBA)
Notes de conception
The H5TC4G63AFR-PBI requires a stable 1.35V supply for VDD and VDDQ. Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. A bulk capacitor (10uF) should be placed near the memory device to handle transient currents during refresh and burst operations. Ensure the power supply can deliver peak current without voltage droop.
Follow the PCB layout guidelines in the SK Hynix datasheet to minimize signal integrity issues. Route DQ, DQS, and address/command lines with matched lengths to maintain timing. Use ground planes beneath the memory to reduce noise. Place termination resistors for ODT as recommended. Keep the clock traces short and shielded to avoid crosstalk.
The industrial temperature range (-40°C to +95°C) allows operation in harsh environments, but proper thermal management is still required. Ensure adequate airflow or heatsinking if the device is placed near other heat-generating components. The 96-ball FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values and design accordingly.
Informations de conformité
RoHS compliant per Kynix product page. Not AEC-Q100 qualified. Other compliance data not available in provided sources.