1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MC12HXUMA1 dari Infineon dan 1EDN7146UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3124MC12HXUMA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
Jumlah Output 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
Waktu naik 15 ns [DATA_NEEDED: typical rise time ns]
Waktu Menurun 30 ns [DATA_NEEDED: typical fall time ns]
Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8 (DSO-8) PG-VSON-1 (6-pin with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
Status RoHS Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Rentang Suhu Kerja — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
Level MSL — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

Spek dan Sumber

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