1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3124MC12HXUMA1 disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1ED3124MC12HXUMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | — |
| Number of Drivers | 1 | — |
| Bilangan Output | 1 | — |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | — |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| Masa Pertambahan | 15 ns | [DATA_NEEDED: typical rise time ns] |
| Masa jatuh | 30 ns | [DATA_NEEDED: typical fall time ns] |
| Suhu Operasi | -40 C to +125 C | — |
| Kemasan | PG-DSO-8 (DSO-8) | PG-VSON-1 (6-pin with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| Status RoHS | Compliant | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Gambaran Suhu Operasi | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |