1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 比較

詳細並排比較 1ED3124MC12HXUMA1 由 Infineon 與 1EDN7146UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 1ED3124MC12HXUMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
輸出數量 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升時間 15 ns [DATA_NEEDED: typical rise time ns]
下降時間 30 ns [DATA_NEEDED: typical fall time ns]
工作溫度 -40 C to +125 C —
封裝 PG-DSO-8 (DSO-8) PG-VSON-1 (6-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 狀態 Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
工作溫度範圍 — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
MSL 等級 — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

資料表與資源

瀏覽所有產品 建立 BOM 索取報價