1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon at 1EDN7146UXTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | 1ED3124MC12HXUMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | — |
| Number of Drivers | 1 | — |
| Bilang ng Outputs | 1 | — |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | — |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| Oras ng Pagtaas | 15 ns | [DATA_NEEDED: typical rise time ns] |
| Time ng Pagbaba | 30 ns | [DATA_NEEDED: typical fall time ns] |
| Temperature na Operasyon | -40 C to +125 C | — |
| Packhaging | PG-DSO-8 (DSO-8) | PG-VSON-1 (6-pin with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| Tindminan RoHS | Compliant | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Hanay ng Temperature na Operasyon | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |