IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Perbandingan

Perbandingan bersamaan detil IPP60R180P7XKSA1 dari Infineon dan IPP100N12S305AKSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP60R180P7XKSA1 IPP100N12S305AKSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) —
Drain-Source Voltage (VDS) 600 V 120 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
Rentang Suhu Kerja -55 °C to +150 °C -55C to +175C (TJ)
Paket PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes Yes (single-pulse)
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL N/A (through-hole) N/A (Through Hole)
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Jumlah Pin — 3 (Gate, Drain, Source)

Spek dan Sumber

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