IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R180P7XKSA1 disebabkan oleh Infineon dan IPP100N12S305AKSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP60R180P7XKSA1 IPP100N12S305AKSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) —
Drain-Source Voltage (VDS) 600 V 120 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
Gambaran Suhu Operasi -55 °C to +150 °C -55C to +175C (TJ)
Kemasan PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
Jenis Pemasangan Through Hole Through Hole
Bilangan Pin 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes Yes (single-pulse)
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL N/A (through-hole) N/A (Through Hole)
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Kiraan Pin — 3 (Gate, Drain, Source)

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