IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R180P7XKSA1 sa pamamagitan ng Infineon at IPP100N12S305AKSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 ✓ NakahandaInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP60R180P7XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | — |
| Drain-Source Voltage (VDS) | 600 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55C to +175C (TJ) |
| Packhaging | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | Yes (single-pulse) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | N/A (through-hole) | N/A (Through Hole) |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |