IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 比較

詳細並排比較 IPP60R180P7XKSA1 由 Infineon 與 IPP100N12S305AKSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPP60R180P7XKSA1 IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon

IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon

IPP60R180P7XKSA1 ✓ 啟用中

規格比較

參數 IPP60R180P7XKSA1 IPP100N12S305AKSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) —
Drain-Source Voltage (VDS) 600 V 120 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
工作溫度範圍 -55 °C to +150 °C -55C to +175C (TJ)
封裝 PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
安裝類型 Through Hole Through Hole
腳位數 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes Yes (single-pulse)
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 N/A (through-hole) N/A (Through Hole)
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
腳位數 — 3 (Gate, Drain, Source)

資料表與資源

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